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Part Datasheet Search > MOSFETs > VISHAY > SI2309DS-T1-GE3 Datasheet PDF
SI2309DS-T1-GE3
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SI2309DS-T1-GE3 Datasheet PDF (10 Pages)
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SI2309DS-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
SOT-23-3
Polarity
P-Channel
Drain to Source Voltage (Vds)
-60.0 V
Continuous Drain Current (Ids)
-1.25 A

SI2309DS-T1-GE3 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)

SI2309DS-T1-GE3 Documents

VISHAY
10 Pages / 0.2 MByte
VISHAY
5 Pages / 0.07 MByte
VISHAY
5 Pages / 0.09 MByte

SI2309DST1 Documents

Vishay Siliconix
MOSFET 60V 1.25A
Vishay Intertechnology
Small Signal Field-Effect Transistor, 0.00125A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
VISHAY
SOT-23P-CH 60V 1.25A
VISHAY
MOSFET 60V 1.6A 1.7W 345mohm @ 10V
Vishay Semiconductor
MOSFET, Power; P-Ch; VDSS -60V; RDS(ON) 0.275Ω; ID -1.25A; TO-236 (SOT-23); PD 1.25W
Vishay Siliconix
MOSFET, Power; P-Ch; VDSS -60V; RDS(ON) 0.275Ω; ID -1.25A; TO-236 (SOT-23); PD 1.25W
Vishay Siliconix
MOSFET 60V 1.25A 1.25W 340mohm @ 10V
Vishay Semiconductor
Trans MOSFET P-CH 60V 1.25A 3Pin SOT-23 T/R
VISHAY
SOT-23P-CH 60V 1.25A
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