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Part Datasheet Search > MOSFETs > VISHAY > SI2333DDS-T1-GE3 Datasheet PDF
SI2333DDS-T1-GE3
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SI2333DDS-T1-GE3 Datasheet PDF (10 Pages)
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SI2333DDS-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SOT-23-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.023 Ω
Polarity
P-Channel
Power Dissipation
1.2 W
Threshold Voltage
400 mV
Drain to Source Voltage (Vds)
12 V
Continuous Drain Current (Ids)
6A
Rise Time
24 ns
Input Capacitance (Ciss)
1275pF @6V(Vds)
Input Power (Max)
1.7 W
Fall Time
20 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1.7 W

SI2333DDS-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
3.04 mm
Size-Width
1.4 mm
Size-Height
1.02 mm
Operating Temperature
-55℃ ~ 150℃
Minimum Packing Quantity
3000

SI2333DDS-T1-GE3 Documents

VISHAY
10 Pages / 0.22 MByte
VISHAY
10 Pages / 0.19 MByte

SI2333DDST1 Documents

VISHAY
SOT-23-3P-CH 12V 6A 28mΩ
Vishay Semiconductor
Trans MOSFET P-CH 12V 5A 3Pin SOT-23
Vishay Siliconix
MOSFET P-CH 12V 6A SOT23
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