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Part Datasheet Search > MOSFETs > Vishay Semiconductor > SI3443BDV-T1-E3 Datasheet PDF
SI3443BDV-T1-E3
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SI3443BDV-T1-E3 Datasheet PDF (6 Pages)
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SI3443BDV-T1-E3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
6 Pin
Case/Package
TSOP-6
Drain to Source Resistance (on) (Rds)
0.048 Ω
Polarity
P-Channel
Power Dissipation
1.1 W
Continuous Drain Current (Ids)
3.60 A
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1100 mW

SI3443BDV-T1-E3 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Size-Length
3.1 mm
Size-Height
1 mm
Operating Temperature
-55℃ ~ 150℃

SI3443BDV-T1-E3 Documents

Vishay Semiconductor
6 Pages / 0.09 MByte
Vishay Semiconductor
10 Pages / 0.19 MByte

SI3443BDVT1 Documents

VISHAY
TSOP-6P-CH 20V 3.6A 60mΩ
Vishay Siliconix
MOSFET P-CH 20V 3.6A 6-TSOP
Vishay Semiconductor
Trans MOSFET P-CH 20V 3.6A 6Pin TSOP T/R
VISHAY
TSOP-6P-CH 20V 3.6A 60mΩ
Vishay Siliconix
Mosfet p-Ch 20V 3.6A 6-Tsop
Vishay Semiconductor
Trans MOSFET P-CH 20V 3.6A 6Pin TSOP T/R
Vishay Intertechnology
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