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SI3457BDV-T1-E3 Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

TSOP

Description:

MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.044Ω; ID -3.7A; TSOP-6; PD 1.14W; VGS +/-20

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SI3457BDV-T1-E3 Datasheet (2 Pages)

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SI3457BDV-T1-E3 Datasheet PDF (2 Pages)

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SI3457BDV-T1-E3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

6 Pin

Case/Package

TSOP

Number of Positions

6 Position

Drain to Source Resistance (on) (Rds)

0.044 Ω

Polarity

P-Channel

Power Dissipation

2 W

Drain to Source Voltage (Vds)

-30.0 V

Continuous Drain Current (Ids)

-3.70 A

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

1.14 W

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SI3457BDV-T1-E3 Size & Package

TYPE

DESCRIPTION

Packaging

Cut Tape (CT)

Size-Length

3.05 mm

Size-Width

1.65 mm

Size-Height

1 mm

Operating Temperature

-55℃ ~ 150℃

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SI3457BDV-T1-E3 Environmental

SI3457BDV-T1-E3 Function Overview

SI3457BDV-T1-E3 Documents

SI3457BDV-T1-E3 Datasheet

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