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SI3457CDV-T1-GE3 Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Category:

MOSFETs

Case Package:

TSOP-6

Description:

TSOP-6P-CH 30V 5.1A 74mΩ

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3D Model

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Documentation:

SI3457CDV-T1-GE3 Datasheet (11 Pages)

Package Outline Dimension on7 Page

Part Numbering System on1 Page

SI3457CDV-T1-GE3 Datasheet PDF (11 Pages)

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SI3457CDV-T1-GE3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

6 Pin

Case/Package

TSOP-6

Drain to Source Resistance (on) (Rds)

74 mΩ

Polarity

P-Channel

Power Dissipation

2 W

Threshold Voltage

3 V

Drain to Source Voltage (Vds)

30 V

Continuous Drain Current (Ids)

5.1A

Rise Time

80 ns

Input Capacitance (Ciss)

450pF @15V(Vds)

Input Power (Max)

3 W

Fall Time

12 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

2000 mW

View Datasheet >

SI3457CDV-T1-GE3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Length

3.05 mm

Size-Width

1.65 mm

Size-Height

1 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

Minimum Packing Quantity

3000

View Datasheet >

SI3457CDV-T1-GE3 Environmental

SI3457CDV-T1-GE3 Function Overview

SI3457CDV-T1-GE3 Documents

SI3457CDV-T1-GE3 Datasheet

VISHAY

11 Pages / 0.18 MByte

SI3457CDV-T1-GE3 Other Datasheet PDF

VISHAY

11 Pages / 0.18 MByte

SI3457CDVT1 Documents

SI3457CDV-T1-GE3 Datasheet PDF

VISHAY

TSOP-6P-CH 30V 5.1A 74mΩ

SI3457CDV-T1-E3 Datasheet PDF

VISHAY

TSOP-6P-CH 30V 5.1A 74mΩ

SI3457CDV-T1-GE3 Datasheet PDF

Vishay Siliconix

VISHAY SILICONIX SI3457CDV-T1-GE3 MOSFET Transistor, P Channel, -5.1A, -30V, 60mohm, -10V, -1V

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SI3457CDV-T1-E3 Datasheet PDF

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