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SI4463BDY-T1-GE3 Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

SOIC-8

Description:

MOSFET 20V 13.7A 3W 11mohm @ 10V

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Documentation:

SI4463BDY-T1-GE3 Datasheet (9 Pages)

Package Outline Dimension on6 Page 7 Page

Part Numbering System on1 Page

SI4463BDY-T1-GE3 Datasheet PDF (9 Pages)

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SI4463BDY-T1-GE3 Specifications

TYPE

DESCRIPTION

Number of Pins

8 Pin

Case/Package

SOIC-8

Number of Positions

8 Position

Drain to Source Resistance (on) (Rds)

0.02 Ω

Polarity

P-Channel

Power Dissipation

1.5 W

Drain to Source Voltage (Vds)

-20.0 V

Continuous Drain Current (Ids)

13.7 A

Operating Temperature (Max)

150 ℃

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SI4463BDY-T1-GE3 Size & Package

TYPE

DESCRIPTION

Packaging

Tape & Reel (TR)

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SI4463BDY-T1-GE3 Environmental

SI4463BDY-T1-GE3 Documents

SI4463BDY-T1-GE3 Datasheet

Vishay Semiconductor

9 Pages / 0.22 MByte

SI4463BDY-T1-GE3 Other Datasheet PDF

Vishay Semiconductor

8 Pages / 0.15 MByte

SI4463BDYT1 Documents

SI4463BDY-T1-E3 Datasheet PDF

VISHAY

SOIC-8P-CH 20V 9.8A 11mΩ

SI4463BDY-T1-E3 Datasheet PDF

Vishay Siliconix

MOSFET; P-Channel; -20V; + 12V; 0.009Ω @ -4.5V, -13A; 1.5W @ degC

SI4463BDY-T1-E3 Datasheet PDF

Vishay Semiconductor

MOSFET; P-Channel; -20V; + 12V; 0.009Ω @ -4.5V, -13A; 1.5W @ degC

SI4463BDY-T1-GE3 Datasheet PDF

Vishay Siliconix

MOSFET P-CH 20V 9.8A 8SOIC

SI4463BDY-T1-GE3 Datasheet PDF

Vishay Semiconductor

MOSFET 20V 13.7A 3W 11mohm @ 10V

SI4463BDY-T1-GE3 Datasheet PDF

VISHAY

SOIC-8P-CH 20V 9.8A 11mΩ

SI4463BDY-T1-E3 Datasheet PDF

Vishay Intertechnology

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