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Part Datasheet Search > MOSFETs > Vishay Siliconix > SI4463CDY-T1-GE3 Datasheet PDF
SI4463CDY-T1-GE3
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SI4463CDY-T1-GE3 Datasheet PDF (10 Pages)
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SI4463CDY-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SO-8
Drain to Source Resistance (on) (Rds)
0.006 Ω
Power Dissipation
5 W
Drain to Source Voltage (Vds)
20 V
Input Capacitance (Ciss)
4250pF @15V(Vds)
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.7W (Ta), 5W (Tc)

SI4463CDY-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

SI4463CDY-T1-GE3 Documents

Vishay Siliconix
10 Pages / 0.16 MByte
Vishay Siliconix
9 Pages / 0.16 MByte

SI4463CDYT1 Documents

VISHAY
SOIC-8P-CH 20V 18.6A 8mΩ
Vishay Semiconductor
Trans MOSFET P-CH 20V 13.6A 8Pin SOIC N T/R
Vishay Siliconix
MOSFET P-CHAN 2.5V SO8
Vishay Intertechnology
Small Signal Field-Effect Transistor, 18.6A I(D), 20V, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
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