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SI4925BDY-T1-E3 Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

SOIC-8

Description:

Trans MOSFET P-CH 30V 5.3A 8Pin SOIC N T/R

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Documentation:

SI4925BDY-T1-E3 Datasheet (6 Pages)

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SI4925BDY-T1-E3 Datasheet PDF (6 Pages)

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SI4925BDY-T1-E3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

SOIC-8

Number of Positions

8 Position

Drain to Source Resistance (on) (Rds)

0.02 Ω

Polarity

P-Channel, Dual P-Channel

Power Dissipation

1.1 W

Drain to Source Voltage (Vds)

-30.0 V

Breakdown Voltage (Gate to Source)

±20.0 V

Continuous Drain Current (Ids)

-7.10 A

Rise Time

12 ns

Thermal Resistance

85℃/W (RθJA)

Fall Time

34 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

1.1 W

View Datasheet >

SI4925BDY-T1-E3 Size & Package

TYPE

DESCRIPTION

Packaging

Tape & Reel (TR)

Size-Length

5 mm

Size-Width

4 mm

Size-Height

1.55 mm

Operating Temperature

-55℃ ~ 150℃

View Datasheet >

SI4925BDY-T1-E3 Environmental

SI4925BDY-T1-E3 Function Overview

SI4925BDY-T1-E3 Documents

SI4925BDY-T1-E3 Datasheet

Vishay Semiconductor

6 Pages / 0.09 MByte

SI4925BDY-T1-E3 Other Datasheet PDF

Vishay Semiconductor

9 Pages / 0.24 MByte

SI4925BDYT1 Documents

SI4925BDY-T1 Datasheet PDF

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SI4925BDY-T1-E3 Datasheet PDF

VISHAY

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SOIC-8 Dual P 30V 5.3A 25mΩ

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