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SI4936BDY-T1-E3 Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

SOIC-8

Description:

Trans MOSFET N-CH 30V 5.9A 8Pin SOIC N T/R

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Documentation:

SI4936BDY-T1-E3 Datasheet (10 Pages)

Package Outline Dimension on8 Page

Part Numbering System on1 Page

SI4936BDY-T1-E3 Datasheet PDF (10 Pages)

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SI4936BDY-T1-E3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

SOIC-8

Drain to Source Resistance (on) (Rds)

0.029 Ω

Polarity

N-Channel, Dual N-Channel

Power Dissipation

2 W

Threshold Voltage

3 V

Input Capacitance

530pF @15V

Drain to Source Voltage (Vds)

30 V

Breakdown Voltage (Drain to Source)

30 V

Continuous Drain Current (Ids)

6.90 A

Thermal Resistance

58℃/W (RθJA)

Input Capacitance (Ciss)

530pF @15V(Vds)

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

2000 mW

View Datasheet >

SI4936BDY-T1-E3 Size & Package

TYPE

DESCRIPTION

Packaging

Tape & Reel (TR)

Size-Length

5 mm

Size-Width

4 mm

Size-Height

1.55 mm

Operating Temperature

-55℃ ~ 150℃

View Datasheet >

SI4936BDY-T1-E3 Environmental

SI4936BDY-T1-E3 Function Overview

SI4936BDY-T1-E3 Documents

SI4936BDY-T1-E3 Datasheet

Vishay Semiconductor

10 Pages / 0.24 MByte

SI4936BDY-T1-E3 Other Datasheet PDF

Vishay Semiconductor

10 Pages / 0.23 MByte

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SI4936BDY-T1-E3 Datasheet PDF

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SOIC-8 Dual N 30V 6.9A 35mΩ

SI4936BDY-T1-E3 Datasheet PDF

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SI4936BDY-T1-GE3 Datasheet PDF

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SOIC-8 Dual N 30V 6.9A 35mΩ

SI4936BDY-T1-GE3 Datasheet PDF

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MOSFET N-CH DUAL 30V 8-SOIC

SI4936BDY-T1-E3 Datasheet PDF

Vishay Semiconductor

Trans MOSFET N-CH 30V 5.9A 8Pin SOIC N T/R

SI4936BDY-T1-GE3 Datasheet PDF

Vishay Semiconductor

Trans MOSFET N-CH 30V 5.9A 8Pin SOIC N T/R

SI4936BDY-T1-E3 Datasheet PDF

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SI4936BDY-T1-E3/BKN Datasheet PDF

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DUAL N-CHANNEL 30V(D-S) MOSFE

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DUAL N-CHANNEL 30V(D-S) MOSFE

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