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Part Datasheet Search > MOSFETs > VISHAY > SI5403DC-T1-GE3 Datasheet PDF
SI5403DC-T1-GE3
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SI5403DC-T1-GE3 Datasheet PDF (11 Pages)
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SI5403DC-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SMD-8
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.025 Ω
Polarity
P-Channel
Power Dissipation
6.3 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
6.00 A
Rise Time
140 ns
Input Capacitance (Ciss)
1340pF @15V(Vds)
Input Power (Max)
6.3 W
Fall Time
18 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2500 mW

SI5403DC-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
3000

SI5403DC-T1-GE3 Documents

VISHAY
11 Pages / 0.21 MByte

SI5403DCT1 Documents

VISHAY
ChipFET-8P-CH 30V 6A 30mΩ
Vishay Siliconix
MOSFET P-CH 30V 6A 1206-8
Vishay Semiconductor
MOSFET 30V 6A 6.3W 30mohm @ 10V
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