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SI7450DP-T1-E3 Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Category:

MOSFETs

Case Package:

SOIC-8

Description:

SOIC-8 N-CH 200V 5.3A 80mΩ

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3D Model

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Documentation:

SI7450DP-T1-E3 Datasheet (11 Pages)

Package Outline Dimension on5 Page 6 Page 7 Page

Part Numbering System on1 Page

SI7450DP-T1-E3 Datasheet PDF (11 Pages)

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SI7450DP-T1-E3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Voltage Rating (DC)

20.0 V

Current Rating

5.30 A

Case/Package

SOIC-8

Drain to Source Resistance (on) (Rds)

90.0 mΩ

Polarity

N-Channel

Power Dissipation

1.90 W

Drain to Source Voltage (Vds)

200 V

Breakdown Voltage (Drain to Source)

200 V

Breakdown Voltage (Gate to Source)

±20.0 V

Continuous Drain Current (Ids)

5.30 A

Rise Time

20 ns

Input Power (Max)

1.9 W

Fall Time

25 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

1.9W (Ta)

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SI7450DP-T1-E3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Length

5.26 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

Minimum Packing Quantity

2500

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SI7450DP-T1-E3 Environmental

SI7450DP-T1-E3 Function Overview

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SI7450DP-T1-E3 Datasheet

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11 Pages / 0.3 MByte

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