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Part Datasheet Search > MOSFETs > Vishay Semiconductor > SI7450DP-T1-GE3 Datasheet PDF
SI7450DP-T1-GE3
$ 0.874
SI7450DP-T1-GE3 Datasheet PDF (11 Pages)
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SI7450DP-T1-GE3 Specifications

TYPE
DESCRIPTION
Number of Pins
8 Pin
Case/Package
PowerPAK SO
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.065 Ω
Polarity
N-Channel
Power Dissipation
1.9 W
Threshold Voltage
4.5 V
Drain to Source Voltage (Vds)
200 V
Continuous Drain Current (Ids)
3.20 A
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1900 mW

SI7450DP-T1-GE3 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Size-Height
1.04 mm

SI7450DP-T1-GE3 Documents

Vishay Semiconductor
11 Pages / 0.3 MByte
Vishay Semiconductor
11 Pages / 0.3 MByte

SI7450DPT1 Documents

VISHAY
PowerPAK N-CH 200V 3.2A
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Trans Smt t/r
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SOIC-8 N-CH 200V 5.3A 80mΩ
VISHAY
SOIC-8 N-CH 200V 5.3A 80mΩ
Vishay Siliconix
VISHAY SI7450DP-T1-GE3 MOSFET Transistor, N Channel, 3.2A, 200V, 65mohm, 10V, 4.5V
Vishay Siliconix
MOSFET N-CH 200V 3.2A PPAK SO-8
Vishay Semiconductor
VISHAY SI7450DP-T1-E3 MOSFET Transistor, N Channel, 5.3A, 200V, 80mohm, 10V, 2V
Vishay Semiconductor
MOSFET 200V 5.3A 5.2W 80mohm @ 10V
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