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Part Datasheet Search > MOSFETs > VISHAY > SI7994DP-T1-GE3 Datasheet PDF
SI7994DP-T1-GE3
Part 3D Model
$ 1.795

SI7994DP-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SO-8
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0046 Ω
Polarity
Dual N-Channel
Power Dissipation
3.5 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
60.0 A
Rise Time
15 ns
Input Capacitance (Ciss)
3500pF @15V(Vds)
Input Power (Max)
3.5 W
Fall Time
15 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3500 mW

SI7994DP-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
2500

SI7994DP-T1-GE3 Documents

VISHAY
13 Pages / 0.34 MByte
VISHAY
13 Pages / 0.33 MByte
VISHAY
4 Pages / 0.27 MByte

SI7994DPT1 Documents

Vishay Siliconix
MOSFET 2N-CH 30V 60A PPAK SO-8
VISHAY
SOIC-8 Dual N 30V 20A 5.6mΩ
Vishay Semiconductor
VISHAY SI7994DP-T1-GE3 Dual MOSFET, Dual N Channel, 60A, 30V, 0.0046Ω, 10V, 3V
Vishay Intertechnology
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