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Part Datasheet Search > High Voltage MOS > Vishay Semiconductor > SIHP22N60E-GE3 Datasheet PDF
SIHP22N60E-GE3
$ 1.825
SIHP22N60E-GE3 Datasheet PDF (9 Pages)
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SIHP22N60E-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.15 Ω
Polarity
N-Channel
Power Dissipation
227 W
Threshold Voltage
2 V
Drain to Source Voltage (Vds)
600 V
Rise Time
68 ns
Input Capacitance (Ciss)
1920pF @100V(Vds)
Fall Time
54 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
227 W

SIHP22N60E-GE3 Size & Package

TYPE
DESCRIPTION
Packaging
Tube
Size-Length
10.51 mm
Size-Width
4.65 mm
Size-Height
9.01 mm
Operating Temperature
-55℃ ~ 150℃

SIHP22N60E-GE3 Documents

Vishay Semiconductor
9 Pages / 0.28 MByte
Vishay Semiconductor
10 Pages / 0.79 MByte
Vishay Semiconductor
3 Pages / 0.09 MByte

SIHP22N60 Documents

VISHAY
TO-220-3 N-CH 600V 21A 180mΩ
Vishay Semiconductor
VISHAY SIHP22N60E-GE3 Power MOSFET, N Channel, 21A, 600V, 0.15Ω, 10V, 2V
VISHAY
TO-220-3 N-CH 600V 21A 180mΩ
Vishay Siliconix
MOSFET N-CH 600V 21A TO220AB
Vishay Semiconductor
VISHAY SIHP22N60E-E3 Power MOSFET, N Channel, 21A, 600V, 0.15Ω, 10V, 2V
Vishay Siliconix
MOSFET N-CH 600V 21A TO220AB
Vishay Semiconductor
VISHAY SIHP22N60S-E3 Power MOSFET, N Channel, 22A, 600V, 160mohm, 10V, 2V
Vishay Siliconix
MOSFET N-CH 600V 22A TO220
VISHAY
TO-220-3 N-CH 600V 22A 160mΩ
Vishay Siliconix
Mosfet n-Ch 600V 20A To220Ab
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