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SISS71DN-T1-GE3
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SISS71DN-T1-GE3 Datasheet PDF (9 Pages)
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SISS71DN-T1-GE3 Specifications

TYPE
DESCRIPTION
Number of Pins
8 Pin
Case/Package
PowerPAK-1212-8
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.047 Ω
Polarity
P-Channel
Power Dissipation
4.8 W
Rise Time
30 ns
Input Capacitance (Ciss)
1050pF @50V(Vds)
Fall Time
11 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-50 ℃
Power Dissipation (Max)
4800 mW

SISS71DN-T1-GE3 Size & Package

TYPE
DESCRIPTION
Size-Length
3.3 mm
Size-Width
3.3 mm
Size-Height
1.04 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

SISS71DN-T1-GE3 Documents

VISHAY
9 Pages / 0.24 MByte

SISS71DNT1 Documents

VISHAY
Trans MOSFET P-CH 100V 6.7A 8Pin PowerPAK 1212-S EP
Vishay Semiconductor
VISHAY SISS71DN-T1-GE3 MOSFET Transistor, P Channel, -23A, -100V, 0.047Ω, -10V, -2.5V New
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