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SPD08P06P Datasheet PDF - Infineon

Manufacturer:

Infineon

Category:

MOSFETs

Case Package:

TO-252-3

Description:

DPAK P-CH 60V 8.83A

Pictures:

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Documentation:

SPD08P06P Datasheet (9 Pages)

Part Numbering System on1 Page

SPD08P06P Datasheet PDF (9 Pages)

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SPD08P06P Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Voltage Rating (DC)

-60.0 V

Current Rating

-8.80 A

Case/Package

TO-252-3

Number of Channels

1 Channel

Polarity

P-CH

Power Dissipation

42W (Tc)

Input Capacitance

420 pF

Gate Charge

15.0 nC

Drain to Source Voltage (Vds)

60 V

Continuous Drain Current (Ids)

8.80 A

Rise Time

46 ns

Input Capacitance (Ciss)

335pF @25V(Vds)

Fall Time

14 ns

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

42W (Tc)

View Datasheet >

SPD08P06P Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Obsolete

Packaging

Tape & Reel (TR)

Size-Length

6.5 mm

Size-Width

6.22 mm

Size-Height

2.3 mm

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SPD08P06P Environmental

SPD08P06P Function Overview

SPD08P06P Documents

SPD08P06P Datasheet

Infineon

9 Pages / 0.11 MByte

SPD08P06P Other Datasheet PDF

Infineon

16 Pages / 0.65 MByte

SPD08P06 Documents

SPD08P06PGBTMA1 Datasheet PDF

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DPAK P-CH 60V 8.83A

SPD08P06P Datasheet PDF

Infineon

DPAK P-CH 60V 8.83A

SPD08P06P G Datasheet PDF

Infineon

Trans MOSFET P-CH 60V 8.83A 3Pin(2+Tab) TO-252

SPD08P06PG Datasheet PDF

Infineon

Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, TO-252, 3Pin

SPD08P06P Datasheet PDF

Siemens Semiconductor

Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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