ST13003N Datasheet PDF - ST Microelectronics

●Description

●The device is manufactured using high voltage multi epitaxial planar technology for high switching

●speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

●Features

●■ High voltage capability

●■ Low spread of dynamic parameters

●■ Minimum lot-to-lot spread for reliable operation

●■ Very high switching speed

●Applications

●■ Compact fluorescent lamps (CFLs)