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Part Datasheet Search > MOSFETs > ST Microelectronics > STB11N52K3 Datasheet PDF
STB11N52K3
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STB11N52K3 Datasheet PDF (19 Pages)
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STB11N52K3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.41 Ω
Polarity
N-Channel
Power Dissipation
125 W
Threshold Voltage
3.75 V
Drain to Source Voltage (Vds)
525 V
Rise Time
18 ns
Input Capacitance (Ciss)
1400pF @50V(Vds)
Input Power (Max)
125 W
Fall Time
42 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
125W (Tc)

STB11N52K3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

STB11N52K3 Documents

ST Microelectronics
19 Pages / 1.18 MByte
ST Microelectronics
3 Pages / 0.31 MByte
ST Microelectronics
20 Pages / 1.12 MByte
ST Microelectronics
10 Pages / 0.75 MByte

STB11N52 Documents

ST Microelectronics
MOSFET Power N-Ch 525V 0.41Ω 10A SuperMESH3 125W
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