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STB11NM60N-1 Datasheet PDF - ST Microelectronics

Manufacturer:

ST Microelectronics

Category:

MOSFETs

Case Package:

TO-262-3

Description:

IPAK N-CH 600V 10A

Pictures:

3D Model

Symbol

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Pinout

Product Pictures

Documentation:

STB11NM60N-1 Datasheet (20 Pages)

Package Outline Dimension on10 Page 11 Page 12 Page 13 Page 14 Page

STB11NM60N-1 Datasheet PDF (20 Pages)

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STB11NM60N-1 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-262-3

Polarity

N-Channel

Power Dissipation

90W (Tc)

Drain to Source Voltage (Vds)

600 V

Continuous Drain Current (Ids)

5.00 A

Rise Time

18.5 ns

Input Capacitance (Ciss)

850pF @50V(Vds)

Fall Time

12 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

90W (Tc)

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STB11NM60N-1 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Obsolete

Packaging

Tube

Operating Temperature

150℃ (TJ)

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STB11NM60N-1 Environmental

STB11NM60N-1 Function Overview

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STB11NM60N-1 Datasheet

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20 Pages / 0.61 MByte

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