STB55NF06-1 Datasheet PDF - ST Microelectronics

●Description

●These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.

●■ 100% avalanche tested

●■ Exceptional dv/dt capability

●Applications

●■ Switching application