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Part Datasheet Search > MOSFETs > ST Microelectronics > STB80NF55-08T4 Datasheet PDF
STB80NF55-08T4
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STB80NF55-08T4 Datasheet PDF (15 Pages)
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STB80NF55-08T4 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
55.0 V
Current Rating
80.0 A
Case/Package
TO-263-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.008 Ω
Polarity
N-Channel
Power Dissipation
300 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
55 V
Breakdown Voltage (Drain to Source)
55.0 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
80.0 A
Rise Time
110 ns
Input Capacitance (Ciss)
3850pF @25V(Vds)
Input Power (Max)
300 W
Fall Time
35 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300W (Tc)

STB80NF55-08T4 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10.4 mm
Size-Width
9.35 mm
Size-Height
4.6 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

STB80NF55-08T4 Documents

ST Microelectronics
15 Pages / 0.34 MByte
ST Microelectronics
1 Pages / 0.42 MByte
ST Microelectronics
1 Pages / 0.12 MByte

STB80NF5508 Documents

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N-CHANNEL 55V - 0.0065Ω - 80A D2PAK/I2PAK/TO-220 STRIPFET II POWER MOSFET
ST Microelectronics
N-channel 55V, 0.0065Ω, 80A, TO-220, D2PAK, TO-247 STripFET™ Power MOSFET
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N-CHANNEL 55V - 0.0065Ω - 80A D2PAK/I2PAK/TO-220 STRIPFET II POWER MOSFET
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