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Part Datasheet Search > MOSFETs > Toshiba > TK56A12N1,S4X Datasheet PDF
TK56A12N1,S4X
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TK56A12N1,S4X Datasheet PDF (9 Pages)
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TK56A12N1,S4X Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Dissipation
45 W
Drain to Source Voltage (Vds)
120 V
Rise Time
20 ns
Input Capacitance (Ciss)
4200pF @60V(Vds)
Fall Time
23 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
45W (Tc)

TK56A12N1,S4X Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
10 mm
Size-Width
4.5 mm
Size-Height
15 mm
Operating Temperature
150℃ (TJ)

TK56A12N1,S4X Documents

Toshiba
9 Pages / 0.23 MByte

TK56A12N1S4 Documents

Toshiba
Trans MOSFET N-CH 120V 112A 3Pin TO-220SIS
Toshiba
Trans MOSFET N-CH 120V 112A 3Pin TO-220SIS
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