TLC2201CDR Datasheet PDF - TI

●description

●The TLC220x, TLC220xA, TLC220xB, and TLC220xY are precision, low-noise operational amplifiers using Texas Instruments Advanced LinCMOSprocess. These devices combine the noise performance of the lowest-noise JFET amplifiers with the dc precision available previously only in bipolar amplifiers. The

●Advanced LinCMOSprocess uses silicon-gate technology to obtain input offset voltage stability

●with temperature and time that far exceeds that obtainable using metal-gate technology. In addition, this technology makes possible input impedance levels that meet or exceed levels offered by top-gate JFET and expensive dielectric-isolated devices.

●B Grade Is 100% Tested for Noise

●    30 nV/√HzMax at f = 10 Hz

●    12 nV/√HzMax at f = 1 kHz

●Low Input Offset Voltage. . . 500 µV Max

●Excellent Offset Voltage Stability With Temperature. . . 0.5 µV/°C Typ

●Rail-to-Rail Output Swing

●Low Input Bias Current

●    1 pA Typ at TA= 25°C

●Common-Mode Input Voltage Range Includes the Negative Rail

●Fully Specified For Both Single-Supply and Split-Supply Operation