●GENERAL DESCRIPTION
●W9425G6JH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM), organized as 4,194,304 words 4 banks 16 bits. W9425G6JH delivers a data bandwidth of up to 500M words per second (-4). To fully comply with the personal computer industrial standard, W9425G6JH is sorted into the following speed grades: -4, -5, -5I and -5A. The -4 grade parts is compliant to the DDR500/CL3 and CL4 specification. The -5/-5I/-5A grade parts are compliant to the DDR400/CL3 specification (the -5I industrial grade, -5A automotive grade which is guaranteed to support -40°C ~ 85°C).
●All Input reference to the positive edge of CLK (except for DQ, DM and CKE). The timing reference
●point for the differential clock is when the CLK and CLK signals cross during a transition. Write and Read data are synchronized with the both edges of DQS (Data Strobe).
●By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W9425G6JH is ideal for main memory in high performance applications.
●FEATURES
●2.5V ± 0.2V Power Supply for DDR400
●2.4V~2.7V Power Supply for DDR500
●Up to 250 MHz Clock Frequency
●Double Data Rate architecture; two data transfers per clock cycle
●Differential clock inputs (CLK and CLK)
●DQS is edge-aligned with data for Read; center-aligned with data for Write
●CAS Latency: 2, 2.5, 3 and 4
●Burst Length: 2, 4 and 8
●Auto Refresh and Self Refresh
●Precharged Power Down and Active Power Down
●Write Data Mask
●Write Latency = 1
●7.8µS refresh interval (8K/64 mS refresh)
●Maximum burst refresh cycle: 8
●Interface: SSTL_2
●Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant
