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AFT27S010NT1 User Reference Manual Guide - NXP

Manufacturer:

NXP

Category:

MOSFETs

Case Package:

PLD-1

Description:

RF Power Transistor,100 to 3600MHz, 10W, Typ Gain in dB is 21.7 @ 2170MHz, 28V, LDMOS, SOT1811

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Pages guide:

Part Numbering System onP41P42

Packaging Infomation onP4P19P20P21P22

Soldering Temperature onP43

Application Area onP4P43

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AFT27S010NT1 Documents

AFT27S010NT1 User Reference Manual Guide

NXP

48 Pages / 2.85 MByte

AFT27S010NT1 Other Datasheet PDF

NXP

30 Pages / 0.29 MByte

AFT27S010NT1 Application Note

NXP

29 Pages / 0.99 MByte

AFT27S010 Documents

AFT27S010NT1 Datasheet PDF

NXP

RF Power Transistor,100 to 3600MHz, 10W, Typ Gain in dB is 21.7 @ 2170MHz, 28V, LDMOS, SOT1811

AFT27S010NT1 Datasheet PDF

Freescale

Trans RF MOSFET N-CH 65V 3Pin PLD-1.5W T/R

AFT27S010N Datasheet PDF

NXP

Airfast RF Power LDMOS Transistor, 728-2700MHz, 1.26W Avg., 28V

AFT27S010NT1 Datasheet PDF

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